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| MPSA28 / MMBTA28 / PZTA28 Discrete POWER & Signal Technologies MPSA28 MMBTA28 C PZTA28 C E C B E C B TO-92 E SOT-23 Mark: 3SS B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 12 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA28 625 5.0 83.3 200 Max *MMBTA28 350 2.8 357 **PZTA28 1,000 8.0 125 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . (c) 1997 Fairchild Semiconductor Corporation MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 100 A, VBE = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 60 V, IE = 0 VCE = 60 V, VBE = 0 VEB = 10 V, IC = 0 80 80 12 100 500 100 V V V nA nA nA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 10 mA, VCE = 5.0 V I C = 100 mA, VCE = 5.0 V I C = 10 mA, IB = 0.01 mA I C = 100 mA, IB = 0.1 mA I C = 100 mA, VCE = 5.0 V 10,000 10,000 1.2 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Cobo Current Gain - Bandwidth Product Output Capacitance I C = 10 mA, VCE = 5.0, f = 100 MHz VCB = 1.0 V, IE = 0, f = 1.0 MHz 125 8.0 MHz pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics 100 VCE = 5V 80 60 25 C 125 C VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 1.6 = 1000 1.2 - 40 C 0.8 25 C 125 C 40 20 0 0.001 - 40 C 0.4 0.01 0.1 I C - COLLECTOR CURRENT (A) P 03 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) P 03 1000 MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor (continued) Typical Characteristics (continued) 2 V BEON - BASE EMITTER ON VOLTAGE (V) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current = 1000 - 40 C 25 C 125 C Base Emitter ON Voltage vs Collector Current 2 1.6 1.2 0.8 0.4 0 VCE = 5V 1.6 1.2 0.8 0.4 0 - 40 C 25 C 125 C 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 100 I C - COLLECTOR CURRENT (mA) P 03 1000 Collector-Cutoff Current vs. Ambient Temperature ICBO - COLLECTOR CURRENT (nA) VCB = 80V 10 BVCER- BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 114.2 114 113.8 113.6 113.4 113.2 113 112.8 0.1 1 10 100 1000 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) P 03 125 RESISTANCE (k ) Input and Output Capacitance f T - GAIN BANDWIDTH PRODUCT (MHz) vs Reverse Voltage f = 1.0 MHz 20 Gain Bandwidth Product vs Collector Current 40 CAPACITANCE (pF) Vce = 5V 30 15 10 C ib 20 5 C ob 10 2 0.1 1 10 100 0 Vce - COLLECTOR VOLTAGE(V) 1 10 20 50 100 150200 I C- COLLECTOR CURRENT (mA) MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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